IBM breakthrough in memory storage

IBM breakthrough in memory storage

Tech May 18, 2016 10:39

zurich - Scientists at IBM have achieved a breakthrough in the field of memory storage. This allows phones to be launched include faster and does not lose data when switched off. Much longer technology comes along, IBM reported.

The scientists knew reliably store three bits of data per cell, which used the new memory technology, phase-change memory (PCM). As a result, it is quick and easy storage possible, which is necessary in order to cope with the increase of data from mobile devices, and the Internet of Things.

PCM is in shutdown including lost no data, while this is the case for dynamic random-access memory (DRAM). The technology is ten million write cycles along, facing up to three thousand at the average USB stick.
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